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Part Number
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STGH30H65DFB-2AG |
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Manufacturer
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STMicroelectronics |
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Description
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IGBT |
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Published
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Mar 1, 2023 |
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Detailed Description
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STGH30H65DFB-2AG
Datasheet
Automotive-grade trench gate field-stop, 650 V, 30 A, high-speed HB series IGBT in an H²PAK-2...
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Datasheet
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STGH30H65DFB-2AG
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Overview
STGH30H65DFB-2AG
Datasheet
Automotive-grade trench gate field-stop, 650 V, 30 A, high-speed HB series IGBT in an H²PAK-2 package
TAB
23 1 H2PAK-2 C(TAB)
G(1)
E(2,3)
G1CTABE23
Features
• AEC-Q101 qualified • High-speed switching series • Maximum junction temperature: TJ = 175 °C • VCE(sat) = 1.
55 V (typ.
) @ IC = 30 A • Safer paralleling • Tight parameter distribution • Low thermal resistance • Soft and very fast recovery antiparallel diode
Applications
• DC/DC converter for EV/HEV • HVAC and climate control
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
The device is part of the new HB series of IGBTs, which represents an optimum...
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