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Part Number
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SCTWA70N120G2V |
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Manufacturer
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STMicroelectronics |
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Description
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Silicon carbide Power MOSFET |
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Published
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Mar 7, 2023 |
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Detailed Description
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SCTWA70N120G2V
Datasheet
Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A in an HiP247 long leads package
HiP247 l...
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Datasheet
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SCTWA70N120G2V
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Overview
SCTWA70N120G2V
Datasheet
Silicon carbide Power MOSFET 1200 V, 21 mΩ typ.
, 91 A in an HiP247 long leads package
HiP247 long leads
D(2, TAB)
Features
Order code
VDS
RDS(on) typ.
ID
SCTWA70N120G2V
1200 V
21 mΩ
91 A
• Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capability (TJ = 200 °C)
Applications
• Switching mode power supply • DC-DC converters • Industrial motor control
G(1) S(3)
AM01475v1_noZen
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.
The device features remarkably low on-resistance pe...
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