Part Number
|
STG15M120F3D7 |
Manufacturer
|
STMicroelectronics |
Description
|
IGBT |
Published
|
Mar 7, 2023 |
Detailed Description
|
STG15M120F3D7
Datasheet
Trench gate field-stop 1200 V, 15 A low-loss M series IGBT die in D7 packing
C G
Features
• 10...
|
Datasheet
|
STG15M120F3D7
|
Overview
STG15M120F3D7
Datasheet
Trench gate field-stop 1200 V, 15 A low-loss M series IGBT die in D7 packing
C G
Features
• 10 µs of short-circuit withstanding time • Low VCE(sat) = 1.
85 V (typ.
) @ IC = 15 A • Positive VCE(sat) temperature coefficient • Tight parameter distribution • Maximum junction temperature: TJ = 175 °C
Applications
E
• Industrial motor control
EGCD
• Industrial drives
• Solar inverters
• Uninterruptable power supplies (UPS)
• PFC converters
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and effi...
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