RF5L15030CB2
Datasheet
30 W, 50 V, HF to 1.
5 GHz RF power LDMOS
transistor
1
3
2 GXB
Pin connection
Pin
Connection
1
Drain
2
Source (bottom side)
3
Gate
Features
Order code
Frequency
VDD
POUT
Gain Efficiency
RF5L15030CB2
1 GHz
50 V
30 W
23.
5 dB
50%
• High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C
operation • In compliance with the European directive 2002/95/EC
Applications
• Industrial, scientific and medical from HF to 1.
5 GHz • FM and TV broadcast • HV/VHF ground communications • Avionics and L-band radar • Wideband communications
Description
The RF5L15030CB2 is a...