STPSC40H12C-Y
Datasheet
40 A 1200 V power
Schottky silicon carbide diode
Product status link STPSC40H12C-Y
Product summary
IF(AV)
2 x 20 A
VRRM
1200 V
Tj (max.
)
175 °C
VF (typ.
)
1.
35 V
Product label
Features
• AEC-Q101 qualified • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high-voltage periphery • PPAP capable • Operating Tj from -40 °C to 175 °C • ECOPACK2 compliant
Applications
• OBC (On Board Battery chargers) • PHEV - EV charging stations • Resonant LLC topology • PFC functions (Power Factor Corrector)
Description
The SiC diode, available in TO-247, is an ultrahigh performance power
Schottky rectifier.
It is manufactured using a...