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Part Number
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ZXMN3B04N8 |
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Manufacturer
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DIODES |
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Description
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30V N-CHANNEL MOSFET |
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Published
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May 10, 2023 |
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Detailed Description
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ZXMN3B04N8
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
Product Summary
BVDSS 30V
RDS(ON) 0.025Ω@VGS = 4.5V
...
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Datasheet
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ZXMN3B04N8
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Overview
ZXMN3B04N8
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.
5V GATE DRIVE
Product Summary
BVDSS 30V
RDS(ON) 0.
025Ω@VGS = 4.
5V
ID TA = +25°C
8.
9A
Description
This new generation of Trench MOSFETs from Diodes Incorporated utilizes a unique structure that combines the benefits of low onresistance with fast switching speed.
This makes them ideal for high efficiency, low voltage, power management applications.
Applications
DC-DC Converters Power Management Functions Disconnect Switches Motor Control
Features
Low On-Resistance Fast Switching Speed Low Threshold Low Gate Drive Low Profile SO-8 Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Fr...
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