Part Number
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DMN2009USS |
Manufacturer
|
DIODES |
Description
|
20V N-CHANNEL MOSFET |
Published
|
May 10, 2023 |
Detailed Description
|
ADVANCED INFORMATION
DMN2009USS
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 20V
RDS(ON) Max
8mΩ @ VG...
|
Datasheet
|
DMN2009USS
|
Overview
ADVANCED INFORMATION
DMN2009USS
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 20V
RDS(ON) Max
8mΩ @ VGS = 10V 9mΩ @ VGS = 4.
5V 12mΩ @ VGS = 2.
5V
ID Max TA = +25°C
12.
8A 12.
1A 10.
5A
Features
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
“Green” Device (Note 3)
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Backlighting Power Management Functio...
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