D State-of-the-Art EPIC-ΙΙB™ BiCMOS Design Significantly Reduces Power Dissipation D ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) D Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 D Typical VOLP (Output Ground Bounce) 1 V at VCC = 5 V, TA = 25°C D High-Drive Outputs (–32-mA IOH, 64-mA IOL ) D Package Options Include Plastic Small-Outline (DW), Shrink Small-Outline (DB), and Thin Shrink Small-Outline (PW) Packages, Ceramic Chip Carriers (FK), and Plastic (N) and Ceramic (J) DIPs SN54ABT640, SN74ABT640 OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS104C – FEBRUARY 1991 – REVISED JANUARY 1997 SN54ABT640 .
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