Product Summary BVDSS 65V RDS(ON) Max 18mΩ @ VGS = 10V 23mΩ @ VGS = 4.
5V ID Max TA = +25°C 8.
1A 7.
1A Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
 DC-DC Converter  Adaptor Switch  Wireless Charging U-DFN2020-6 (Type F) DMT6017LFDF 65V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  100% Unclamped Inductive Switching (UIS) Test in Production— Ensures More Reliable and Robust End Application  0.
6mm Profile—Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low On-Resistance  ESD Prote...

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