| Part Number | M48Z58 |
| Manufacturer | STMicroelectronics |
| Title | 64-Kbit SRAM |
| Description | The M48Z58/Y ZEROPOWER® RAM is an 8 Kbit x 8 non-volatile static RAM that integrates powerfail deselect circuitry and battery control logic on a s... |
| Features |
• Integrated, ultra low power SRAM, power-fail control circuit, and battery • READ cycle time equals WRITE cycle time • Automatic power-fail chip deselect and WRITE protection • WRITE protect voltages: (VPFD = power-fail deselect voltage) • M48Z35: VCC = 4.75 to 5.5 V; 4.5 V ≤ VPFD ≤ 4.75 V • M48Z35... |
| File Size | 372.80KB |
| Datasheet |
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M48Z512A : The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 .
M48Z512AV : The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 .
M48Z512AY : The M48Z512A/Y/V ZEROPOWER® RAM is a non-volatile, 4,194,304-bit static RAM organized as 524,288 .
M48Z512BV : The M48Z512BV ZEROPOWER® RAM is a nonvolatile, 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The device combines an internal lithium battery, a CMOS SRAM and a control circuit in a plastic, 32-pin DIP module. June 2011 Doc ID 14885 Rev 3 This is information on a product still in production but not recommended for new designs. 1/21 www.st.com 1 Contents Contents M48Z512BV 1 Device overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Operating modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.1 READ mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
M48Z58Y : The M48Z58/Y ZEROPOWER® RAM is an 8 Kbit x 8 non-volatile static RAM that integrates powerfail deselect circuitry and battery control logic on a single die. The monolithic chip is available in two special packages to provide a highly integrated battery-backed memory solution. The M48Z58/Y is a non-volatile pin and function equivalent to any JEDEC standard 8 K x 8 SRAM. It also easily fits into many ROM, EPROM, and EEPROM sockets, providing the non-volatility of PROMs without any requirement for special WRITE timing or limitations on the number of WRITEs that can be performed. The 28-pin, 600 mil DIP CAPHAT™ houses the M48Z58/Y silicon with a long life lithium button cell in a single package..