| Part Number | IAUC120N06S5N011 |
| Manufacturer | Infineon |
| Title | Automotive MOSFET |
| Description | . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... |
| Features |
• OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche test... |
| File Size | 821.86KB |
| Datasheet |
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IAUC120N06S5N017 : IAUC120N06S5N017 OptiMOS™-5 Power Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel - Enhancement mode - Normal level • MSL1 up to 260°C peak reflow • 175 °C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Product Summary VDS RDS(on),max ID 60 V 1.7 mW 120 A PG-TDSON-8-43 1 1 Type IAUC120N06S5N017 Package PG-TDSON-8-43 Marking 5N06N017 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Drain current Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature Symbol Conditions ID I D,pulse V GS=10 V,.