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UT100N04


Part Number UT100N04
Manufacturer UTC
Title N-CHANNEL POWER MOSFET
Description The UTC UT100N04 is an N-channel power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior...
Features * RDS(ON) ≤ 4.8 mΩ @ VGS=10V, ID=50A RDS(ON) ≤ 6.5 mΩ @ VGS=4.5V, ID=50A * High Switching Speed * Improved dv/dt capability
 SYMBOL Power MOSFET
 ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UT100N04L-TA3-T UT100N04G-TA3-T TO-220 UT100N04L-TN3-R UT100N04G-TN3-R T...

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UT100N03 : TO-220 The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 TO-251  FEATURES TO-220 * RDS(ON) ≤ 4.6 mΩ @ VGS=10 V, ID=50A * RDS(ON) ≤ 6.0 mΩ @ VGS=4.5 V, ID=40A TO-220F/TO-251/TO-252/TO-252D/TO-263 * RDS(ON) ≤ 5.3 mΩ @ VGS=10 V, ID=50A * RDS(ON) ≤ 8.0 mΩ @ VGS=4.5 V, ID=40A PDFN5×6 * RDS(ON) ≤ 4.0 mΩ @ VGS=10 V, ID=50A * RDS(ON) ≤ 5.8 mΩ @ VGS=4.5 V, ID=40A  SYMBOL 1 TO-252D 1 Power MOSFET 1 TO-220F 1 TO-252 1 PDFN5×6 TO-263 www.unisonic.com.tw Copyright © 2022 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-193.M UT100N03 Power MOSF.

UT100N03-Q : The UT100N03-Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 5.3 mΩ @ VGS=10V, ID=50A * RDS(ON) ≤ 8.0 mΩ @ VGS=4.5V, ID=40A 1 TO-220 1 1 TO-263 PDFN5×6  SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UT100N03L-TA3-T UT100N03G-TA3-T TO-220 UT100N03L-TQ2-T UT100N03G-TQ2-T TO-263 UT100N03L-TQ2-R UT100N03G-TQ2-R TO-263 UT100N03L-P5060-R UT100N03G-P5060-R PDFN5×6 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 12345678 GDS - - - - GDS - - - - GDS - - - - S S SGDDD.




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