| Part Number | TK5A50D5 |
| Manufacturer | Toshiba |
| Title | Silicon N-Channel MOSFET |
| Description | MOSFETs Silicon N-Channel MOS (π-MOS) TK5A50D5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trrf = ... |
| Features |
(1) Fast reverse recovery time: trrf = 40 ns (typ.), trr = 90 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 1.62 Ω (typ.) (3) High forward transfer admittance: |Yfs| = 3.0 S (typ.) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 500 V) (5) Enhancement mode: Vth = 2.5 to 4.5 V (VDS = 10 ...
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| File Size | 407.26KB |
| Datasheet |
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TK5A50D : TK5A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK5A50D Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage .
TK5A50D : iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK5A50D，ITK5A50D ·FEATURES ·Low drain-source on-resistance: RDS(on) = 1.3Ω (typ.) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 5 IDM Drain Current-Single Pulsed 20 PD Total Dissipation @TC=25℃ 35 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTER.