Part Number
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ACTS10MS |
Manufacturer
|
Intersil Corporation |
Description
|
Radiation Hardened Triple Three-Input NAND Gate |
Published
|
Mar 23, 2005 |
Detailed Description
|
ACTS10MS
April 1995
Radiation Hardened Triple Three-Input NAND Gate
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE MIL-STD-1835 D...
|
Datasheet
|
ACTS10MS
|
Overview
ACTS10MS
April 1995
Radiation Hardened Triple Three-Input NAND Gate
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR CDIP2-T14, LEAD FINISH C TOP VIEW
A1 1 B1 2 A2 3 B2 4 C2 5 Y2 6 GND 7 14 VCC 13 C1 12 Y1 11 C3 10 B3 9 A3 8 Y3
Features
• 1.
25 Micron Radiation Hardened SOS CMOS • Total Dose 300K RAD (Si) • Single Event Upset (SEU) Immunity 1 x 10-10 Errors/Bit-Day (Typ) • SEU LET Threshold 80 MEV-cm2/mg • Dose Rate Upset 1011 RAD (Si)/s, 20ns Pulse • Latch-Up Free Under Any Conditions • Military Temperature Range: -55oC to +125oC • Significant Power Reduction Compared to ALSTTL Logic • DC Operating Voltage Range: 4.
5V to 5.
5V • Input Logic Levels - VIL = 0.
8V Max - VIH = VCC/...
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