| Part Number | GC4371 |
| Manufacturer | Microsemi |
| Title | High Speed NIP Diodes |
| Description | The GC4300 series are high speed (anode base) NIP diodes made with high resistivity reverse epitaxial silicon material. These diodes are passivate... |
| Features |
Available as packaged devices or as chips for hybrid applications Low Loss Suitable for applications to 18Ghz High Speed Low Insertion Loss High Isolation Reverse Polarity for Applications with special Bias Considerations RoHS Compliant 1 APPLICATIONS/BENEFITS RF / Microwave Switch... |
| File Size | 182.88KB |
| Datasheet |
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GC4372 : The GC4300 series are high speed (anode base) NIP diodes made with high resistivity reverse epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems. The NIP diode is used when negative bias current is available for forward conduction and will operate with as little as -10 mA bias. These diodes have somewhat faster speeds as compared with similar PIN diodes. These devices can withstand storage temperatures from -65°C to +200°C and will operate over the range from -55°C to +150°C. All devices meet or exceed military environmental specifications of MIL-PRF-19500..
GC4373 : The GC4300 series are high speed (anode base) NIP diodes made with high resistivity reverse epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems. The NIP diode is used when negative bias current is available for forward conduction and will operate with as little as -10 mA bias. These diodes have somewhat faster speeds as compared with similar PIN diodes. These devices can withstand storage temperatures from -65°C to +200°C and will operate over the range from -55°C to +150°C. All devices meet or exceed military environmental specifications of MIL-PRF-19500..
GC4374 : The GC4300 series are high speed (anode base) NIP diodes made with high resistivity reverse epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems. The NIP diode is used when negative bias current is available for forward conduction and will operate with as little as -10 mA bias. These diodes have somewhat faster speeds as compared with similar PIN diodes. These devices can withstand storage temperatures from -65°C to +200°C and will operate over the range from -55°C to +150°C. All devices meet or exceed military environmental specifications of MIL-PRF-19500..
GC4375 : The GC4300 series are high speed (anode base) NIP diodes made with high resistivity reverse epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems. The NIP diode is used when negative bias current is available for forward conduction and will operate with as little as -10 mA bias. These diodes have somewhat faster speeds as compared with similar PIN diodes. These devices can withstand storage temperatures from -65°C to +200°C and will operate over the range from -55°C to +150°C. All devices meet or exceed military environmental specifications of MIL-PRF-19500..