| Part Number | IS61WV3216DBLL |
| Manufacturer | ISSI |
| Title | 32K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM |
| Description | The ISSI IS61WV3216DBLx and IS64WV3216DBLx are high-speed, 524,288-bit static RAMs organized as 32,768 words by 16 bits. It is fabricated using IS... |
| Features |
HIGH SPEED: (IS61/64WV3216DBLL) • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical) • Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS61/64WV3216DBLS) • High-speed access time: 25, 35 ns • Low Active Power: 55 mW (typical) • Low Standby Power: 12 µW (typical... |
| File Size | 533.45KB |
| Datasheet |
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IS61WV3216DBLS : The ISSI IS61WV3216DBLx and IS64WV3216DBLx are high-speed, 524,288-bit static RAMs organized as 32,768 words by 16 bits. It is fabricated using ISSI's high- performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. .