BC556

BC550 : FEATURE for switching and AF amplifier application These transistors are subdivided into three groups A, B and C according to their current gain. BC546···BC550 NPN Silicon Epitaxial Planar Transistor Absolute Maximum Ratings(Ta=25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) BC46 BC547 BC550 BC548 BC549 BC546 BC547 BC550 BC548 BC549 Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range SYMBOLS VCBO VCEO VEBO IC ICM Ptot Tj Tstg Value 80 50 30 65 45 30 6 100 200 500 150 -65 to +150 UNITS V V V mA mA mW ℃ ℃ Website: www.kingtronics.com Email: info@kingtronics.com Tel: (852) 8106 703.

BC550 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC549B/D Low Noise Transistors NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC549 BC550 Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 30 45 30 50 5.0 100 625 5.0 Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 Watt 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/.

BC550 : NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC559 and BC560. 1 handbook, halfpage BC549; BC550 PINNING PIN 1 2 3 emitter base collector DESCRIPTION 2 3 3 2 1 MAM182 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC549 BC550 VCEO collector-emitter voltage BC549 BC550 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open colle.

BC550 : BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxial Silicon Transistor November 2014 BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Transistor Features • Switching and Amplifier • High-Voltage: BC546, VCEO = 65 V • Low-Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560 1 TO-92 1. Collector 2. Base 3. Emitter Ordering Information Part Number BC546ABU BC546ATA BC546BTA BC546BTF BC546CTA BC547ATA BC547B BC547BBU BC547BTA BC547BTF BC547CBU BC547CTA BC547CTFR BC548BU BC548BTA BC548CTA BC549BTA BC549BTF BC549CTA BC550CBU BC550CTA Marking BC546A BC546A BC546B BC546B BC546C BC547A BC547B BC547B BC547B BC547B BC547C BC547C BC547C BC548 BC548B BC548C BC549B .

BC550 : SEMICONDUCTOR TECHNICAL DATA LOW NOISE AMPLIFIER APPLICATION. FEATURE For Complementary with PNP Type BC559/560. BC549/550 EPITAXIAL PLANAR NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage BC549 BC550 BC549 Collector-Emitter Voltage BC550 Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 30 50 30 45 5 100 625 150 -55 150 UNIT V V V mA mW ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector-Emitter Breakdown Voltage BC549 BC550 V(BR)CEO IC=10mA, IB=0 Collector-Base Breakdown Voltage BC549 BC550 V(BR)CBO IC=.

BC550 : NPN Epitaxial Silicon Transistor BC546 / BC547 / BC548 / BC549 / BC550 Features • Switching and Amplifier • High−Voltage: BC546, VCEO = 65 V • Low−Noise: BC549, BC550 • Complement to BC556, BC557, BC558, BC559, and BC560 • These are Pb−Free Devices ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Collector−Base Voltage BC546 BC547 / BC550 BC548 / BC549 VCBO V 80 50 30 Collector−Emitter Voltage BC546 BC547 / BC550 BC548 / BC549 VCEO V 65 45 30 Emitter−Base Voltage BC546 / BC547 VEBO BC548 / BC549 / BC550 V 6 5 Collector Current (DC) IC 100 mA Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 °C Storage Temperature Range TSTG −65 to +150 °C S.

BC550 : SYMBOL Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Power Dissipation at Ta=25ºC PD Derate Above 25ºC Power Dissipation at Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg BC549 30 30 5.0 100 625 5.0 1.5 12 - 55 to +150 THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Rth (j-c) Rth (j-a) 83.3 200 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION Collector Emitter Voltage SYMBOL VCEO TEST CONDITION IC=1mA, IB=0 BC549 Collector Base Voltage VCBO BC550 IC=100µA, IE=0 BC549 Emitter Base V.

BC550A : FEATURE for switching and AF amplifier application These transistors are subdivided into three groups A, B and C according to their current gain. BC546···BC550 NPN Silicon Epitaxial Planar Transistor Absolute Maximum Ratings(Ta=25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) BC46 BC547 BC550 BC548 BC549 BC546 BC547 BC550 BC548 BC549 Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range SYMBOLS VCBO VCEO VEBO IC ICM Ptot Tj Tstg Value 80 50 30 65 45 30 6 100 200 500 150 -65 to +150 UNITS V V V mA mA mW ℃ ℃ Website: www.kingtronics.com Email: info@kingtronics.com Tel: (852) 8106 703.

BC550A : Green compound Document Number: DS_S1405001 Version: B14 Small Signal Product DIMENSIONS TO-92 Bulk TO-92 Ammo A B C E D SUGGEST PAD LAYOUT I G H BC546A/B/C ~ BC550A/B/C Taiwan Semiconductor DIM. A B C D E F G H I Unit (mm) Min 4.40 Max 5.10 4.30 4.70 12.50 14.50 1.17 1.37 0.35 0.55 1.17 1.37 0.59 1.40 0.29 0.51 3.300 4.100 Unit (inch) Min Max 0.173 0.201 0.169 0.185 0.492 - 0.046 0.054 0.014 0.022 0.046 0.054 0.023 0.055 0.011 0.020 0.130 0.161 DIM. A B C D E G H I Unit (mm) Min 4.30 Max 4.70 4.30 4.70 12.50 - 2.20 2.80 0.35 0.55 1.00 1.20 0.29 0.51 3.30 3.70 Unit (inch) Min Max 0.169 0.185 0.169 0.185 0.492 - 0.087 0.110 0.014 0.022 0.039 0..

BC550A : SYMBOL Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Power Dissipation at Ta=25ºC PD Derate Above 25ºC Power Dissipation at Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg BC549 30 30 5.0 100 625 5.0 1.5 12 - 55 to +150 THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Rth (j-c) Rth (j-a) 83.3 200 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION Collector Emitter Voltage SYMBOL VCEO TEST CONDITION IC=1mA, IB=0 BC549 Collector Base Voltage VCBO BC550 IC=100µA, IE=0 BC549 Emitter Base V.

BC550B : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC549B/D Low Noise Transistors NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC549 BC550 Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 30 45 30 50 5.0 100 625 5.0 Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 Watt 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/.

BC550B : FEATURE for switching and AF amplifier application These transistors are subdivided into three groups A, B and C according to their current gain. BC546···BC550 NPN Silicon Epitaxial Planar Transistor Absolute Maximum Ratings(Ta=25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) BC46 BC547 BC550 BC548 BC549 BC546 BC547 BC550 BC548 BC549 Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range SYMBOLS VCBO VCEO VEBO IC ICM Ptot Tj Tstg Value 80 50 30 65 45 30 6 100 200 500 150 -65 to +150 UNITS V V V mA mA mW ℃ ℃ Website: www.kingtronics.com Email: info@kingtronics.com Tel: (852) 8106 703.

BC550B : Green compound Document Number: DS_S1405001 Version: B14 Small Signal Product DIMENSIONS TO-92 Bulk TO-92 Ammo A B C E D SUGGEST PAD LAYOUT I G H BC546A/B/C ~ BC550A/B/C Taiwan Semiconductor DIM. A B C D E F G H I Unit (mm) Min 4.40 Max 5.10 4.30 4.70 12.50 14.50 1.17 1.37 0.35 0.55 1.17 1.37 0.59 1.40 0.29 0.51 3.300 4.100 Unit (inch) Min Max 0.173 0.201 0.169 0.185 0.492 - 0.046 0.054 0.014 0.022 0.046 0.054 0.023 0.055 0.011 0.020 0.130 0.161 DIM. A B C D E G H I Unit (mm) Min 4.30 Max 4.70 4.30 4.70 12.50 - 2.20 2.80 0.35 0.55 1.00 1.20 0.29 0.51 3.30 3.70 Unit (inch) Min Max 0.169 0.185 0.169 0.185 0.492 - 0.087 0.110 0.014 0.022 0.039 0..

BC550B : Low Noise Transistors NPN Silicon MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC549 BC550 30 45 30 50 5.0 100 625 5.0 1.5 12 –55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watt mW/°C °C Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W BC549B,C BC550B,C 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) COLLECTO.

BC550B : SYMBOL Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Power Dissipation at Ta=25ºC PD Derate Above 25ºC Power Dissipation at Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg BC549 30 30 5.0 100 625 5.0 1.5 12 - 55 to +150 THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Rth (j-c) Rth (j-a) 83.3 200 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION Collector Emitter Voltage SYMBOL VCEO TEST CONDITION IC=1mA, IB=0 BC549 Collector Base Voltage VCBO BC550 IC=100µA, IE=0 BC549 Emitter Base V.

BC550C : FEATURE for switching and AF amplifier application These transistors are subdivided into three groups A, B and C according to their current gain. BC546···BC550 NPN Silicon Epitaxial Planar Transistor Absolute Maximum Ratings(Ta=25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) BC46 BC547 BC550 BC548 BC549 BC546 BC547 BC550 BC548 BC549 Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range SYMBOLS VCBO VCEO VEBO IC ICM Ptot Tj Tstg Value 80 50 30 65 45 30 6 100 200 500 150 -65 to +150 UNITS V V V mA mA mW ℃ ℃ Website: www.kingtronics.com Email: info@kingtronics.com Tel: (852) 8106 703.

BC550C : NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC559 and BC560. 1 handbook, halfpage BC549; BC550 PINNING PIN 1 2 3 emitter base collector DESCRIPTION 2 3 3 2 1 MAM182 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC549 BC550 VCEO collector-emitter voltage BC549 BC550 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open colle.