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Part Number
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C5386 |
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Manufacturer
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Inchange Semiconductor |
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Title
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NPN Power Transistor |
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Description
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·High Breakdown Voltage ·High Switching Speed ·Low Saturation Voltage ·100% avalanche tested ·Minimu...
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Features
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PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
600
V
VCE(sa...
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Published
|
Apr 5, 2024 |
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Datasheet
|
C5386 PDF File
|
Features
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
600
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB= 1.5A
ICBO
Collec...
Similar Datasheet
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