| Part Number | A5G19H605W19N |
| Manufacturer | NXP |
| Title | Airfast RF Power GaN Transistor |
| Description | This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwi... |
| Features |
and benefits
• High terminal impedances for optimal broadband performance • Advanced high performance in-package Doherty • Improved linearized error vector magnitude with next generation signal • Able to withstand extremely high output VSWR and broadband operating conditions • Plastic package 3 Typ... |
| File Size | 485.05KB |
| Datasheet |
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