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PTVA120251EA


Part Number PTVA120251EA
Manufacturer MACOM
Title 25W High Power RF LDMOS FET
Description The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high ga...
Features include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA, TCASE = 25°C 300 µs pulse width, 12% duty cycle 60 70...

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PTVA120251EA : The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA120251EA Package H-36265-2 Output Power (dBm) Drain Efficiency (%) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA, TCASE = 25°C 300 µs pulse width, 12% duty cycle 60 Efficiency 55 70 60 50 45 40 35 30 18 Output Power 50 40 1200 MHz 1300 MHz 30 1400 MHz 1200 MHz 1300 Mhz 20 1400 MHz a120251ea-v2-gr1a``` 10 22 26 30 34 Input Power (dBm) Featu.




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