| Part Number | CGHV40030 |
| Manufacturer | MACOM |
| Title | GaN HEMT |
| Description | The CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain... |
| Features |
• Up to 6 GHz Operation • 30 W Typical Output Power • 16 dB Gain • Application circuit for 0.96 - 1.4 GHz • 70% Efficiency at PSAT • 50 V Operation Listing of Available Hardware Application Circuits / Demonstration Circuits Application Circuit CGHV40030F-AMP CGHV40030F-AMP2 Operating Frequency 0.... |
| File Size | 1.11MB |
| Datasheet |
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CGHV40030 : Cree’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band amplifier applications. The datasheet specifications are based on a 0.96 - 1.4 GHz amplifier. The CGHV40030 operates on a 50 volt rail circuit while housed in a 2-lead flange or pill package. Typical Performance 0.96 - 1.4 GHz (TC = 25˚C), 50 V Parameter 0.96 GHz 1.1 GHz 1.25 GHz Gain @ PSAT Saturated Output Power 15.6 29 15.8 30 Drain Efficiency @ PSAT 62 74 Note: Measured CW in the CGHV40030-AMP application circuit. 16.6 36 64 Package Types: 440166 a.
CGHV40030 : Wolfspeed’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L-, S- and C-Band amplifier applications. The datasheet specifications are based on a 0.96 - 1.4 GHz amplifier. The CGHV40030 operates on a 50 volt rail circuit while housed in a 2-lead flange or pill package. Typical Performance 0.96 - 1.4 GHz (TC = 25ºC), 50 V Parameter Gain @ PSAT Saturated Output Power Drain Efficiency @ PSAT 0.96 GHz 15.6 29 62 Note: Measured CW in the CGHV40030-AMP application circuit. 1.1 GHz 15.8 30 74 1.25 GHz 16.6 36 64 Package Types: 440166 a.