| Part Number | IMWH170R650M1 |
| Manufacturer | Infineon |
| Title | 1700V SiC Trench MOSFET |
| Description | 1 – gate 2 – drain 3 – source TO-247 HCC – 3Pin 2021-10-27 restricted Copyright © Infineon T Type IMWH170R650M1 Package PG-TO247-3-STD-NN4.8 ... |
| Features |
• VDSS = 1700 V at Tvj = 25°C • IDDC = 7.5 A at TC = 25°C • RDS(on) = 650 mΩ at VGS = 12 V, Tvj = 25°C • Optimized for fly-back topologies • 12 V / 0 V gate-source voltage compatible with most fly-back controllers • Very low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Full... |
| File Size | 1.25MB |
| Datasheet |
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