18–23 GHz GaAs MMIC Power Amplifier AA022P1-00 Features I Single Bias Supply Operation (6 V) I 14 dB Typical Small Signal Gain I 24.
5 dBm Typical P1 dB Output Power at 23 GHz I 0.
25 µm Ti/Pd/Au Gates I 100% On-Wafer RF and DC Testing I 100% Visual Inspection to MIL-STD-883 MT 2010 Chip Outline 1.
700 1.
613 1.
371 0.
086 0.
000 0.
000 0.
520 2.
784 3.
400 0.
329 Dimensions indicated in mm.
All DC (V) pads are 0.
1 x 0.
1 mm and RF In, Out pads are 0.
07 mm wide.
Chip thickness = 0.
1 mm.
Description Alpha’s two-stage balanced K band GaAs MMIC power amplifier has a typical P1 dB of 24.
5 dBm with 13 dB associated gain and 11% power added efficiency at 23 GHz.
The chip uses Alpha’s proven 0.
25 µm MESFET...

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