ASI2010
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI 2010 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz.
PACKAGE STYLE .
250 2L FLG
A ØD C E .
060 x 45° CHAMFER
B
FEATURES:
• PG = 5 dB min.
at 10 W/ 2,000 MHz • Hermetic Microstrip Package • Omnigold™ Metalization System
L
G
H J
F I K M NP
DIM A B
MINIMUM
inches / mm
MAXIMUM
inches / mm
.
028 / 0.
71 .
740 / 18.
80 .
245 / 6.
22 .
128 / 3.
25 .
125 / 3.
18 .
110 / 2.
79 .
117 / 2.
97 .
560 / 14.
22 .
790 / 20.
07 .
225 / 5.
72 .
165 / 4.
19 .
003 / 0.
08 .
058 / 1.
47 .
119 / 3.
02 .
149 / 3.
78
.
032 / 0.
81 .
255 / 6.
48 .
132 / 3.
35 .
117 / 2.
97 .
570 / 14.
48 .
810 / 20.
57 .
235 / 5.
97 .
185 / 4.
70 .
007 / 0.
18 .
068 / 1.
73 ...