AM1214-175
RF & MICROWAVE
TRANSISTORS
L-BAND RADAR APPLICATIONS
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REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 160 W MIN.
WITH 7.
3 dB GAIN
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400 x .
500 2LFL (S038) hermetically sealed
ORDER CODE AM1214-175
B RA ND IN G 1214-175
DESCRIPTION
The AM1214-175 device is a high power Class C
transistor specifically designed for L-Band radar pulsed output and driver applications.
This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 3:1 output VSWR at rated RF conditions.
Low RF therma...