AM1214-200
RF & MICROWAVE
TRANSISTORS L-BAND RADAR APPLICATIONS
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PRELIMINARY DATA
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 200 W MIN.
WITH 7.
0 dB GAIN
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400 x .
500 2LFL (M205) hermetically sealed ORDER CODE BRANDING 1214-200 AM1214-200
PIN CONNECTION DESCRIPTION The AM1214-200 device is a high power Class C
transistor specifically designed for L-Band Radar pulsed output and driver applications.
This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures, and wiil tolerate severe mismatch and overdrive conditions.
Low RF ther...