AM1517-012
RF & MICROWAVE
TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS
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REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING METAL/CERAMIC HERMETIC PACKAGE POUT = 12 W MIN.
WITH 8.
5 dB GAIN
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400 x .
400 2NLFL (S042) hermeticallysealed ORDER CODE AM1517-012 BRANDING 1517-12
PIN CONNECTION DESCRIPTION The AM1517-012 power
transistor is designed specifically for Satellite communications applications in the 1.
5 − 1.
7 GHz frequency range.
The device is capable of withstanding any mismatch load condition at any phase angle (VSWR ∞:1) under full rated conditions.
The unit is an overlay, emitter site ballasted, ge...