AM2729-110
RF & MICROWAVE
TRANSISTORS S-BAND RADAR APPLICATIONS
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REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 105 W MIN.
WITH 6.
5 dB GAIN
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400 x .
500 2L SFL (S138) hermetically sealed ORDER CODE AM2729-110 BRANDING 2729-110
DESCRIPTION PIN CONNECTION The AM2729-110 device is a high power silicon bipolar
NPN transistor specifically designed for SBand radar pulsed output and driver applications.
This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR.
Low RF thermal res...