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Part Number
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ADG636 |
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Manufacturer
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Analog Devices |
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Description
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1 pC Charge Injection/ 100 pA Leakage CMOS 5 V/+5 V/+3 V Dual SPDT Switch |
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Published
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Mar 24, 2005 |
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Detailed Description
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a
1 pC Charge Injection, 100 pA Leakage CMOS ؎5 V/+5 V/+3 V Dual SPDT Switch ADG636
FUNCTIONAL BLOCK DIAGRAM
ADG636
S1A...
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Datasheet
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ADG636
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Overview
a
1 pC Charge Injection, 100 pA Leakage CMOS ؎5 V/+5 V/+3 V Dual SPDT Switch ADG636
FUNCTIONAL BLOCK DIAGRAM
ADG636
S1A 4
6
FEATURES 1 pC Charge Injection ؎2.
7 V to ؎ 5.
5 V Dual Supply +2.
7 V to +5.
5 V Single Supply Automotive Temperature Range: –40؇ C to +125؇C 100 pA (Max @ 25؇ C) Leakage Currents 85 ⍀ Typ On Resistance Rail-to-Rail Operation Fast Switching Times Typical Power Consumption (0.
1 W) TTL/CMOS Compatible Inputs 14-Lead TSSOP Package APPLICATIONS Automatic Test Equipment Data Acquisition Systems Battery-Powered Instruments Communication Systems Sample-and-Hold Systems Remote Powered Equipment Audio and Video Signal Routing Relay Replacement Avionics
D1
S1B 5
S2A 11
9
S2B...
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