Part Number
|
HYB3117800BSJ-60 |
Manufacturer
|
Siemens Semiconductor Group |
Description
|
2M x 8 - Bit Dynamic RAM 2k Refresh |
Published
|
Mar 26, 2005 |
Detailed Description
|
2M x 8-Bit Dynamic RAM
HYB3117800BSJ-50/-60/-70
Advanced Information
• • •
2 097 152 words by 8-bit organization 0 to...
|
Datasheet
|
HYB3117800BSJ-60
|
Overview
2M x 8-Bit Dynamic RAM
HYB3117800BSJ-50/-60/-70
Advanced Information
• • •
2 097 152 words by 8-bit organization 0 to 70 °C operating temperature Performance: -50 tRAC tCAC tAA tRC tPC RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time 50 13 25 90 35 -60 60 15 30 110 40 -70 70 20 35 130 45 ns ns ns ns ns
• •
Single + 3.
3 V (± 0.
3V) supply Low power dissipation max.
432 active mW (-50 version) max.
396 active mW (-60 version) max.
360 active mW (-70 version) 7.
2 mW standby (LV-TTL) 3.
6 mW standby (CMOS) Output unlatched at cycle end allows two-dimensional chip selection Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only ...
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