Part Number
|
HYB314100BJ-50 |
Manufacturer
|
Siemens Semiconductor Group |
Description
|
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
Published
|
Mar 26, 2005 |
Detailed Description
|
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
HYB 314100BJ/BJL -50/-60/-70
Advanced Information
• • • •
4 1...
|
Datasheet
|
HYB314100BJ-50
|
Overview
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
HYB 314100BJ/BJL -50/-60/-70
Advanced Information
• • • •
4 194 304 words by 1-bit organization 0 to 70 ˚C operating temperature Fast Page Mode Operation Performance: -50 -60 60 15 30 110 40 -70 70 20 35 130 45 ns ns ns ns ns
tRAC tCAC tAA tRC tPC
•
RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time
50 13 25 95 35
Single + 3.
3 V (± 0.
3 V ) supply with a built-in Vbb generator • Low power dissipation max.
252 mW active (-50 version) max.
216 mW active (-60 version) max.
198 mW active (-70 version) • Standby power dissipation: 7.
2 mW max.
standby (TTL) 3.
6 mW max.
standby (CMOS)...
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