Part Number
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HYB314400BJ-50- |
Manufacturer
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Siemens Semiconductor Group |
Description
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1M x 4-Bit Dynamic RAM |
Published
|
Mar 26, 2005 |
Detailed Description
|
1M × 4-Bit Dynamic RAM
HYB 314400BJ-50/-60
Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 °C o...
|
Datasheet
|
HYB314400BJ-50-
|
Overview
1M × 4-Bit Dynamic RAM
HYB 314400BJ-50/-60
Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode Operation • Performance: -50 -60 60 15 30 110 40 ns ns ns ns ns
tRAC tCAC tAA tRC tPC
RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time
50 13 25 95 35
• Fast access and cycle time Single + 3.
3 V (± 0.
3 V) supply with a built-in VBB generator • Low power dissipation max.
252 mW active (-50 version) max.
216 mW active (-60 version) • Standby power dissipation: 7.
2 mW max.
standby (LVTTL) 3.
6 mW max.
standby (LVCMOS) • Output unlatched at cycle end allows two-dimensional chip selec...
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