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HSU227

Part Number HSU227
Manufacturer Hitachi Semiconductor
Description Silicon Schottky Barrier Diode for High Speed Switching
Published Mar 26, 2005
Detailed Description HSU227 Silicon Schottky Barrier Diode for High Speed Switching ADE-208-779(Z) Rev 0 Mar. 1999 Features • Low capacitanc...
Datasheet HSU227




Overview
HSU227 Silicon Schottky Barrier Diode for High Speed Switching ADE-208-779(Z) Rev 0 Mar.
1999 Features • Low capacitance.
(C=3.
0pF max) • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.
Ordering Information Type No.
HSU227 Laser Mark S3 Package Code URP Outline Cathode mark Mark 1 S3 2 1.
Cathode 2.
Anode HSU227 Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note: Symbol VRRM Io Value 25 50 *2 Unit V mA mA °C °C IFSM Tj 200 125 -55 to +125 Tstg 1.
10msec sine wave 1 pulse Electrical Character...






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