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HSU276

Part Number HSU276
Manufacturer Hitachi Semiconductor
Description Silicon Schottky Barrier Diode for Mixer
Published Mar 26, 2005
Detailed Description HSU276 Silicon Schottky Barrier Diode for Mixer ADE-208-078F(Z) Rev 6 Jul. 1996 Features • High forward current, Low ca...
Datasheet HSU276




Overview
HSU276 Silicon Schottky Barrier Diode for Mixer ADE-208-078F(Z) Rev 6 Jul.
1996 Features • High forward current, Low capacitance.
• Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.
Ordering Information Type No.
HSU276 Laser Mark 3 Package Code URP Outline Cathode mark Mark 1 3 2 1.
Cathode 2.
Anode HSU276 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 3 30 125 –55 to +125 Unit V mA °C °C Electrical Characteristics (Ta = 25°C) Item Reverse voltage Reverse current Forward current Capacitance ESD-Capability Note: *1 Symbol VR IR I...






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