HUF76107P3
Data Sheet October 1999 File Number 4382.
5
20A, 30V, 0.
052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFETâ„¢ process.
This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.
This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.
It was designed for use in applications where power efficiency is important, such as switching
regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in port...