HS-65647RH
August 1995
Radiation Hardened 8K x 8 SOS CMOS Static RAM
Functional Diagram
AI ROW ROW DECODER 128 X 512 MEMORY ARRAY
Features
• 1.
2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 105 RAD (Si) - Transient Upset 1 x 1011 RAD (Si)/s - Single Event Upset 1 x 10-12 Errors/Bit-Day • Latch-up Free • LET Threshold 250 MEV/mg/cm2 • Low Standby Supply Current 10mA (Max) • Low Operating Supply Current 100mA (2MHz) • Fast Access Time 50ns (Max), 35ns (Typ) • High Output Drive Capability • Gated Input Buffers (Gated by E2) • Six
Transistor Memory Cell • Fully Static Design • Asynchronous Operation • CMOS Inputs • 5V Single Power Supply • Military Temperature Range -55oC to +125oC ...