DatasheetsPDF.com

HN1K04FU

Part Number HN1K04FU
Manufacturer Toshiba Semiconductor
Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Published Mar 26, 2005
Detailed Description HN1K04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K04FU High Speed Switching Applications Analog S...
Datasheet HN1K04FU




Overview
HN1K04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K04FU High Speed Switching Applications Analog Switch Applications Unit: mm · · · · High input impedance and extremely low drive current.
Vth is low and it is possible to drive directly at low-voltage CMOS.
: Vth = 0.
8 to 2.
5 V Switching speed is fast.
Suitable for high-density mounting because of a compact package.
Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD (Note) Tch Tstg Rating 50 10 50 200 150 -55 to 150 Unit V V mA mW °C °C JEDEC JEITA TOSHIBA Weig...






Similar Datasheet






Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)