Part Number
|
CY64146V |
Manufacturer
|
Cypress Semiconductor |
Description
|
4M (256K x 16) Static RAM |
Published
|
Mar 26, 2005 |
Detailed Description
|
CY62146V MoBL®
4M (256K x 16) Static RAM
Features
• • • • • • • Wide voltage range: 2.7V–3.6V Ultra-low active, standby...
|
Datasheet
|
CY64146V
|
Overview
CY62146V MoBL®
4M (256K x 16) Static RAM
Features
• • • • • • • Wide voltage range: 2.
7V–3.
6V Ultra-low active, standby power Easy memory expansion with CE and OE features TTL-compatible inputs and outputs Automatic power-down when deselected CMOS for optimum speed/power Package available in a standard 44-Pin TSOP Type II (forward pinout) package deselected (CE HIGH).
The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).
Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LO...
Similar Datasheet