Part Number
|
BAV199W |
Manufacturer
|
NXP |
Description
|
Low-leakage double diode |
Published
|
Mar 26, 2005 |
Detailed Description
|
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BAV199W Low-leakage double diode
Product specification Supers...
|
Datasheet
|
BAV199W
|
Overview
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BAV199W Low-leakage double diode
Product specification Supersedes data of 1998 Jan 09 1999 May 11
Philips Semiconductors
Product specification
Low-leakage double diode
FEATURES • Small plastic SMD package • Low leakage current: typ.
3 pA • Switching time: typ.
0.
8 µs • Continuous reverse voltage: max.
75 V • Repetitive peak reverse voltage: max.
85 V • Repetitive peak forward current: max.
500 mA.
APPLICATIONS • Low-leakage current applications in surface mounted circuits.
DESCRIPTION Epitaxial, medium-speed switching, double diode in a small plastic SOT323 (SC-70) SMD package.
The diodes are connected in series.
Marking code: JY- ...
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