AT28BV16 Features • • • • • • • • • 2.
7 to 3.
6V Supply Full Read and Write Operation Low Power Dissipation 8 mA Active Current 50 µA CMOS Standby Current Read Access Time - 250 ns Byte Write - 3 ms Direct Microprocessor Control DATA Polling READ/BUSY Open Drain Output on TSOP High Reliability CMOS Technology Endurance: 100,000 Cycles Data Retention: 10 Years Low Voltage CMOS Compatible Inputs and Outputs JEDEC Approved Byte Wide Pinout Commercial and Industrial Temperature Ranges 16K (2K x 8) Battery-Voltage™ CMOS E2PROM Description The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features.
The AT28BV16 is a 16K memory...

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