Feb 2003
AO9926 Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO9926 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
They offer operation over a wide gate drive range from 1.
8V to 8V.
The two devices may be used individually, in parallel or to form a bidirectional blocking switch.
Features
VDS (V) = 20V ID = 5A RDS(ON) 50m Ω (VGS = 4.
5V) RDS(ON) 65m Ω (VGS = 2.
5V) RDS(ON) 90m Ω (VGS = 1.
8V)
D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1
D2
G1 S1
G2 S2
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain C...