AM80912-030
RF & MICROWAVE
TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS
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REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 30 W MIN.
WITH 7.
8 dB GAIN
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400 x .
400 2LFL (S036) hermetically sealed ORDER CODE AM80912-030 BRANDING 80912-30
DESCRIPTION The AM80912-030 device is a high power Class C
transistor specifically designed for JTIDS pulsed output and driver applications.
This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 15:1 output VSWR at rated RF conditions.
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