AM81214-006
RF & MICROWAVE
TRANSISTORS L-BAND RADAR APPLICATIONS
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REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 5.
5 W MIN.
WITH 10 dB GAIN
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310 x .
310 2LF L (S064) hermetically sealed ORDER CODE AM81214-6 BRANDING 81214-6
DESCRIPTION The AM81214-006 device is a high power Class C
transistor specifically designed for L-Band Radar pulsed driver applications.
This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 5:1 output VSWR at rated RF conditions.
Low RF thermal resistan...