AM81214-030
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RF & MICROWAVE
TRANSISTORS L-BAND RADAR APPLICATIONS
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR ∞:1 LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 26 W MIN.
WITH 7.
2 dB GAIN
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310 x .
310 2LFL (S064) hermetically sealed ORDER CODE AM81214-030 BRANDING 81214-30
DESCRIPTION The AM81214-030 device is a high power
transistor specifically designed for L-Band Radar pulsed driver applications.
The device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding ∞:1 output VSWR at rated RF conditions.
Low RF thermal resistance and c...