GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-544A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology.
It is molded in water clear plastic package.
7.
62 (.
300) MIE-544A4 Unit: mm(inch) Package Dimensions φ 5.
05 (.
199) 5.
47 (.
215) 5.
90 (.
230) 1.
00 (.
039) SEE NOTE 2 FLAT DENOTES CATHODE Features l High radiant power and high radiant intesity Suitable for DC and high pulse current operation Standard T-1 3/4 ( φ5mm) package, radiant angle : 40° Peak wavelength λP =940 nm Good spectral matching to si-photodetecto 2.
54 NOM.
(.
100) SEE NOTE 3 0.
50 TYP.
(.
020) 23.
40 MIN.
(.
921) l l l l 1.
00MIN.
(.
039) A C Notes : 1.
To...

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