Silicon MOS IC
Intelligent Power Devices (IPDs) MIP501, MIP502 MIP501 , MIP502 Silicon MOS IC s Features q MIP501 3.8±0.2 10.8±0.2 7.5±0.2 4.5±0.2 Unit : mm High breakdown voltage, N-Ch MOS FET output (V DSS 40V Ron 0.5 Ω) Over-current-protection function built-in Reset function built-in 16.0±1.0 90° 0.65±0.1 0.85±0.1 q q q 2.5±0.1 1.0±0.1 0.65±0.1 0.7±0.1 ...
Panasonic Semiconductor