DISCRETE SEMICONDUCTORS
DATA SHEET
LTE21009R
NPN microwave power
transistor
Product specification Supersedes data of November 1994 1997 Feb 19
Philips Semiconductors
Product specification
NPN microwave power
transistor
FEATURES • Diffused emitter ballasting resistors • Self-aligned process entirely ion implanted and gold sandwich metallization • optimum temperature profile • excellent performance and reliability • Input matching cell improves input impedance and facilitates the design of wideband circuits.
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LTE21009R
PINNING - SOT440A PIN 1 2 3 collector base emitter connected to flange DESCRIPTION
1 c
APPLICATIONS • Common emitter class-A linear power amplifiers up to 4.
2 GHz.
3 ...