TetraFET D1201UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.
5V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN M I E K G • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • USEFUL PO AT 1GHz DP PIN 1 PIN 3 SOURCE GATE PIN 2 DRAIN DIM mm A 16.
51 B 6.
35 C 45° D 3.
30 E 18.
92 F 1.
52 G 2.
16 H 14.
22 I 1.
52 J 6.
35 K 0.
13 M 5.
08 N 1.
27 x 45° Tol.
0.
25 0.
13 5° 0.
13 0.
08 0.
13 0.
13 0.
08 0.
13 0.
13 0.
03 0.
51 0.
13 Inches 0.
650 0.
250 45° 0.
130 0.
745 0.
060 0.
085 0.
560 0.
060 0.
250 0.
005 0.
200 0.
050 x 45° Tol.
0.
010 0.
005 5° 0.
005 0.
003 0.
005 0.
005 0.
003 0.
005 0.
005 0.
001 0.
020 0.
0...

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