TetraFET D2218UK METAL GATE RF SILICON FET MECHANICAL DATA C 2 A 3 B D ( 2 p ls ) GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.
5V – 1GHz SINGLE ENDED FEATURES E 1 G H F • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS DRAIN DP PIN 1 PIN 3 SOURCE GATE PIN 2 • LOW Crss • SIMPLE BIAS CIRCUITS DIM A B C D E F G H mm 16.
51 6.
35 45° 1.
52 6.
35 0.
13 3.
56 0.
64 Tol.
0.
25 0.
13 5° 0.
13 0.
13 0.
03 0.
51 0.
13 Inches 0.
650 0.
250 45° 0.
060 0.
250 0.
005 0.
140 0.
024 Tol.
0.
010 0.
005 5° 0.
005 0.
005 0.
001 0.
020 0.
005 • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from DC to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwis...

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