2SJ479(L), 2SJ479(S) Silicon P Channel DV–L MOS FET High Speed Power Switching ADE-208-541 1st.
Edition Features • Low on-resistance R DS(on) = 25 mΩ typ.
• 4V gate drive devices.
• High speed switching Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1.
Gate 2.
Drain 3.
Source 4.
Drain S 2SJ479(L), 2SJ479(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings –30 ±20 –30 –120 –30 50 150 –55 to +1...

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